Dual endpoint detection for advanced phase shift and binary photomasks

ABSTRACT

The present invention provides a method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at certain regions of the photomask to obtain dual endpoints, e.g., etch rate or thickness loss of both a photoresist layer and an absorber layer. By monitoring transmissity of an optical beam transmitted through areas having photoresist layer and etched absorber layer at two different predetermined wavelength, dual process endpoints may be obtained by a signal optical detection.

RELATED APPLICATIONS

This application claims priority to U.S. Provisional Patent ApplicationSer. No. 61/713,185 filed on Oct. 12, 2012, and U.S. Provisional PatentApplication Ser. No. 61/749,156, filed on Jan. 4, 2013, both of whichare incorporated by reference in their entireties.

BACKGROUND OF THE INVENTION

Field of the Invention

Embodiments of the present invention generally relate to methods todetect endpoints for both a photoresist layer and an absorber layer inan etching process for the fabrication of photomasks useful in themanufacture of integrated circuits.

Description of the Related Art

In the manufacture of integrated circuits (IC), or chips, patternsrepresenting different layers of the chip are created by a chipdesigner. A series of reusable masks, or photomasks, are created fromthese patterns in order to transfer the design of each chip layer onto asemiconductor substrate during the manufacturing process. Mask patterngeneration systems use precision lasers or electron beams to image thedesign of each layer of the chip onto a respective mask. The masks arethen used much like photographic negatives to transfer the circuitpatterns for each layer onto a semiconductor substrate. These layers arebuilt up using a sequence of processes and translate into the tinytransistors and electrical circuits that comprise each completed chip.Thus, any defects in the mask may be transferred to the chip,potentially adversely affecting performance. Defects that are severeenough may render the mask completely useless. Typically, a set of 15 to30 masks is used to construct a chip and can be used repeatedly.

The next generation photomask as further discussed below is formed on alow thermal expansion glass or a quartz substrate having a multilayerfilm stack disposed thereon. The multilayer film stack may include atleast an absorber layer and a photomask shift mask layer. Whenmanufacturing the photomask, a photoresist layer is disposed on the filmstack to facilitate transferring features into the film stack during thesubsequent patterning processes. During the patterning process, thecircuit design is written onto the photomask by exposing portions of thephotoresist to extreme ultraviolet light or ultraviolet light, makingthe exposed portions soluble in a developing solution. The solubleportion of the resist is then removed, allowing the underlying filmstack exposed through the remaining photoresist to be etched. The etchprocess removes the film stack from the photomask at locations where theresist was removed, i.e., the exposed film stack is removed.

During processing, endpoint data from the etching of the film stack formanufacturing photomasks may be used to determine whether the process isoperating according to required specifications, and whether the desiredresults such as etch uniformity and feature critical dimensions areachieved. Since each photomask generally has its own set of features orpatterns, different film stacks on the photomask being etched may yielddifferent endpoint data upon different materials being used in the filmstack, thereby making it difficult to determine if the desired etchresults are obtained for a specific photomask manufacture process.Furthermore, during an etching process, the etching rate for etching thephotoresist layer and the film stack for the photomask may be different.Accordingly, when directing a radiation to the photoresist layer and thefilm stack on the photomask, different thickness variation between thephotoresist layer and the film stack may generate different reflectiveor transmissive signal to the endpoint data, therefore, making it evenmore difficult to determine an accurate endpoint for both thephotoresist layer and the photomask etching process without interferedby the photoresist thickness variation. Thus, an accurate etchingprocess endpoint control to the film stack disposed on the photomask andthe photoresist layer thickness remaining on the photomask after theetching process for advanced PSM (phase-shift mask) or EUV technology ishighly desirable.

Therefore, there is an ongoing need for improved etching endpointprocess control in photomask fabrication, including improved apparatusand methods for collecting etch rate data and determining processendpoints.

SUMMARY OF THE INVENTION

The present invention provides a method and apparatus for etching aphotomask substrate with enhanced process monitoring, for example, byproviding for optical monitoring at certain regions of the photomask toobtain dual endpoints, e.g., etch rate or thickness loss of both aphotoresist layer and an absorber layer. In one embodiment, a method ofdetermining dual etching endpoints on an etching process includesperforming an etching process on an absorber layer disposed on a firstsurface of a substrate through a patterned photoresist layer in a plasmaetch chamber, directing radiation having a wavelength between about 200nm and about 800 nm to an area of the absorber layer uncovered by thepatterned photoresist layer during the etching process, collecting afirst optical signal transmitted through the area of the absorber layeruncovered by the patterned photoresist layer, collecting a secondoptical signal transmitted through an area of the absorber layer coveredby the patterned photoresist layer, analyzing a waveform obtained fromthe optical signals at two different wavelengths, and determining afirst endpoint for etching the absorber layer and a second endpoint foretching the photoresist layer based on the transmitted optical signal atthe two different wavelengths.

In another embodiment, a method of determining dual etching endpoints onan etching process includes performing an etching process on a chromiumcontaining layer disposed on a first surface of a substrate through apatterned photoresist layer in a plasma etch chamber, directing aradiation source having a wavelength from about 200 nm and about 800 nmfrom the first surface of the substrate to areas both covered anduncovered by the patterned photoresist layer, collecting a first opticalsignal transmitted through the area of the chromium layer uncovered bythe patterned photoresist layer to obtain a first waveform from thetransmitted first optical signal, analyzing the first waveform obtainedthe transmitted first optical signal transmitted through the firstsurface of the substrate, determining a first endpoint of the etchingprocess when the first optical signal in the first waveform becomessaturated, collecting a second optical signal transmitted through anarea of the absorber layer covered by the patterned photoresist layer toobtain a second waveform from the transmitted second optical signal,analyzing the second waveform obtained from the second optical signalstransmitted through the photoresist layer, and determining a secondendpoint of the etching process when the second waveform becomessaturated.

In yet another embodiment, a method of determining dual etchingendpoints on an etching process includes performing an etching processon a chromium containing layer disposed on a first surface of asubstrate through a patterned photoresist layer in a plasma etchchamber, directing a radiation source to areas of the chromium layeruncovered by the patterned photoresist layer and a surface of thephotoresist layer, collecting a first optical signal at a wavelengthbetween about 200 nm and about 400 nm transmitted through the areauncovered by the patterned photoresist layer to obtain a first waveformfrom the transmitted first optical signal, analyzing a first waveformobtained the transmitted first optical signal reflected from the firstsurface of the substrate, determining a first endpoint of the etchingprocess when the transmitted first optical signal becomes saturated,directing a second radiation source having a second wavelength aboutgreater than 400 nm from the area of the surface of the photoresistlayer, collecting a second optical signal transmitted through thesurface of the photoresist layer to obtain a second waveform from thetransmitted second optical signal, analyzing a second waveform obtainedthe transmitted second optical signal transmitted through thephotoresist layer, and determining a second endpoint of the photoresistlayer when the transmitted second optical signal becomes saturated.

In yet another embodiment, a method of determining a thickness loss of aphotoresist layer during an etching process includes performing anetching process on an absorber layer disposed on a first surface of asubstrate through a patterned photoresist layer in a plasma etchchamber, directing radiation having a wavelength greater than 400 nm toan area of the absorber layer covered by the patterned photoresist layerduring the etching process, collecting an optical signal transmittedthrough the area of the absorber layer covered by the patternedphotoresist layer, analyzing a waveform obtained from the opticalsignals at the wavelength greater than 400 nm, and determining athickness loss of the photoresist layer for etching the photoresistlayer based on the transmitted optical signal.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features, advantages andobjects of the invention are attained and can be understood in detail, amore particular description of the invention, briefly summarized above,may be had by reference to the embodiments thereof which are illustratedin the appended drawings.

It is to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 illustrates a etch chamber incorporating one embodiment of thepresent invention;

FIG. 2 illustrates a flow diagram regarding an endpoint determinationprocess during fabrication process in accordance with one embodiment ofthe present invention;

FIGS. 3A-3C illustrate schematically structures of one embodiment of thephotomasks during fabrication;

FIG. 4 illustrates one embodiment of optical signals detected for etchrate determination for etching an absorber layer; and

FIGS. 5A-5B illustrate one embodiment of optical signals detected foretch rate determination for etching a phtoresist layer.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

It is to be noted, however, that the appended drawings illustrate onlyexemplary embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

DETAILED DESCRIPTION

The present invention provides a method and apparatus for etching aphotomask substrate with enhanced process monitoring, for example, byproviding for optical monitoring at certain regions of the photomask toobtain desired etch rate or endpoint determination for both aphotoresist layer and an absorber layer disposed on the photomasksubstrate. Although the discussions and illustrative examples focus onthe etching rate detection, thickness loss and process endpointdetermination during an etching process of a photoresist layer and anabsorber layer disposed on a photomask substrate, various embodiments ofthe invention can also be adapted for process monitoring of othersuitable substrates, including transparent substrates, or dielectricsubstrates and optical disks. Although the discussions and illustrativeexamples focus on the etching of a photomask structure, variousembodiments of the invention can also be adapted for process monitoringof other suitable substrates, including transparent or dielectricsubstrates or other semiconductor wafers.

FIG. 1 is a schematic cross sectional view of a plasma etch chamber 10in accordance with one embodiment of the invention. Suitable plasma etchchambers include the Tetra™ II photomask etch chamber or the DecoupledPlasma Source (DPS™) chamber available from Applied Materials, Inc., ofSanta Clara, Calif. Other process chambers may also be used inconnection with embodiments of the invention, including, for example,capacitive coupled parallel plate chambers and magnetically enhanced ionetch chambers, as well as inductively coupled plasma etch chambers ofdifferent designs. The particular embodiment of the etch chamber 10shown herein is provided for illustrative purposes and should not beused to limit the scope of the invention. It is contemplated that theinvention may be utilized in other processing systems, including thosefrom other manufacturers.

The process chamber 10 generally includes a cylindrical sidewall orchamber body 12, an energy transparent ceiling 13 mounted on the body12, and a chamber bottom 17. The ceiling 13 may be flat, rectangular,arcuate, conical, dome or multi-radius shaped. At least one inductivecoil 26 is disposed above at least a portion of the ceiling 13. In theembodiment depicted in FIG. 1A, two concentric coils 26 are shown. Thechamber body 12 and the chamber bottom 17 of the process chamber 10 canbe made of a metal, such as anodized aluminum, and the ceiling 13 can bemade of an energy transparent material such as a ceramic or otherdielectric material.

A substrate support member 16 is disposed in the process chamber 10 tosupport a substrate 120 during processing. The support member 16 may bea conventional mechanical or electrostatic chuck with at least a portionof the support member 16 being electrically conductive and capable ofserving as a process bias cathode. While not shown, a photomask adaptermay be used to secure the photomask on the support member 16. Thephotomask adapter generally includes a lower portion milled to cover anupper portion of the support member and a top portion having an openingthat is sized and shaped to hold a photomask. In one embodiment, the topportion of the photomask adapter has a square opening. A suitablephotomask adapter is disclosed in U.S. Pat. No. 6,251,217, issued onJun. 26, 2001, which is incorporated herein by reference to the extentnot inconsistent with aspects and claims of the invention.

Process gases are introduced into the process chamber 10 from a processgas source 48 through a gas distributor 22 peripherally disposed aboutthe support member 16. Mass flow controllers (not shown) for eachprocess gas, or alternatively, for mixtures of the process gas, aredisposed between the process chamber 10 and the process gas source 48 toregulate the respective flow rates of the process gases.

A plasma zone 14 is defined by the process chamber 10, the substratesupport member 16 and the ceiling 13. A plasma is generated in theplasma zone 14 from the process gases by supplying power from a powersupply 27 to the inductive coils 26 through an RF match network 35. Thesupport member 16 may include an electrode disposed therein, which ispowered by an electrode power supply 28 and generates a capacitiveelectric field in the process chamber 10 through an RF match network 25.Typically, RF power is applied to the electrode in the support member 16while the body 12 is electrically grounded. The capacitive electricfield, which is transverse to the plane of the support member 16,influences the directionality of charged species to provide moreanisotropic etching of the substrate 120.

Process gases and etchant byproducts are exhausted from the processchamber 10 through an exhaust port 34 to an exhaust system 30. Theexhaust system 30 may be disposed in the bottom 17 of the processchamber 10 or may be disposed in the body 12 of the process chamber 10for removal of process gases. A throttle valve 32 is provided in theexhaust port 34 for controlling the pressure in the process chamber 10.

FIG. 1 further illustrates an endpoint detection system 164 operativelycoupled to the process chamber 10 in accordance with one embodiment ofthe invention. According to embodiments of the invention, at least oneview port (or called optical access port) is provided in of thesubstrate support member 16. The optical access port may generallycomprise a flat window made of quartz or other materials that transmitlight over a broad wavelength spectrum. In the example shown in FIG. 1,the two optical access ports comprise respectively a window at aperipheral region 16P, and a window 112 at a central region 16C. Theendpoint detection system 164 is configured to detect optical signalsthrough these windows, which allows optical monitoring of variouslocations on the photomask substrate 120 from its backside duringetching when the detection is in transmission mode. It is noted thatdifferent numbers of windows may be provided at other locations of thesubstrate support member 16.

The endpoint detection system 164 comprises optical setup for operatingin reflection or transmission modes, and is configured for differenttypes of measurements such as reflectance or transmittance,interferometry, or optical emission spectroscopy. Depending on theapplication of interest, e.g., the material layers or substratestructure being processed, endpoints may be detected based on a changein the reflectance or transmittance intensities, the number ofinterference fringes, or changes in optical emission intensities atspecific wavelengths, or a combination thereof.

The optical setup of the endpoint detection system 164 in a reflectionmode of operation allows reflectance (or reflectometry) andinterferometric measurement to be performed. The endpoint system 164generally comprises an optical source 166, a focusing assembly 168 forfocusing an incident optical beam 176 having at least two wavelengthsfrom the optical source 166 onto an spot or area 180 on the backside ofsubstrate 120, when a reflection mode is used, and a photodetector 170for measuring the intensity of a return optical beam 153 transmittedthrough the area 180 of the substrate 120.

Alternatively, an external light source 190 is used for transmittancemeasurements. For transmission mode, the external light source 190 willbe coupled into the chamber 10 through a window 192 provided on theceiling 13. The use of the external light source 190 for transmittancemeasurements has an advantage because it can provide a more stablesignal, as compared to a plasma source, which may be subjected tofluctuations arising from the etch process. The external light source190 may be configured to allow monitoring at selected wavelengths thatare free from potential interferences from the plasma species. Theexternal light source 190 can be operated in a continuous or pulsed modeto allow for various signal processing options for enhancing endpointdetection capabilities and so on. Details for pulsed source operationwith light source 190 are similar to those previously described forsource 166. Other embodiments may involve the use of a pulsed orcontinuous source for both reflection and transmission measurements. Inanother embodiment, the external light source 190 may be providedthrough the optical access window 112 in the substrate support member16, and the transmission signal monitored through the window 192.

As an example of transmission monitoring, output from the light source190 is coupled via a fiber 194 to pass through the window 192 onto thesubstrate 120 such as a photomask. Transmitted light (e.g., off afeature on the photomask) is collected by a collimating lens 196 furtherpassing through the substrate 120 to the photodetector 170 disposed inthe endpoint detector 164.

The optical setup of the endpoint detection system 164 in a transmissionmode of operation may include the light source 190 positioned to directan optical signal through substrate 120 to the photodetector 170.Optionally, the light source 190 may be the plasma utilized to performthe etch process. Alternatively, the optical source 166 may bepositioned below the substrate 120 in reflection mode of operation todirect an optical signal to a backside of the 120 to the photodetector170 as needed.

The photodetector 170 may be multi-wavelength detector, or aspectrometer. Based on the measured signals of the transmitted opticalbeam 153, a computer system 172 calculates portions of the real-timewaveform and compares it with a stored characteristic waveform patternto extract information relating to the etch process. In this case, thecalculation may be based on slope changes or other characteristicchanges in the detected signals, either in reflection or transmissionmode, for example, when a film is etched through. Alternatively, thecalculation may be based on interferometric signals as the depth of atrench or the thickness of a film changes during etching. In otherembodiments, more detailed calculations may be performed based onreflection and transmission data obtained over a wide spectrum in orderto determine the depth or thickness at any point in the etch process, orto determine the lateral dimensions of the features being etched.

The light source 190 provides a signal having certain range including atleast first wavelength and a second wavelength. The first and secondwavelengths are selected such that a signal characteristic of the firstwavelength interfacing with a photoresist layer is the inverse of asignal characteristic of the second wavelength interfacing with theabsorber layer. The signal characteristic may be intensity orpolarization as needed. The inverse characteristic is utilized to cancelout the effect or interference with the signal interfacing with theabsorber layer to leave a resultant signal primarily composed of theportion of the optical signal interfaced with a target being etch, suchas the absorber layer disposed on the substrate 120. As the resultantsignal has less noise, a more precise and accurate determination of anetch endpoint or thickness of the target material may be realized. Inone configuration, the second wavelength is selected to have awavelength about or equal to twice the wavelength of the firstwavelength. In one embodiment, the first wavelength is configured to bearound 200 nm and about 400 nm, such as between about 230 nm and about350 nm. The second wavelength is configured to be around 400 nm andabout 800 nm.

The light source 190 (which may be include multiple individual lightsources), may be polychromatic, white light, or other light sourcesuitable for providing light in the at least first and secondwavelengths. In general, the optical signal from the transmitted beam153 may be analyzed to extract information regarding the presence orabsence of layers (e.g., the photoresist layer or the absorber layer,such as a metal-containing layer), or the thickness of certain materiallayers within the area 180. The intensity of the incident light beam 160is selected to be sufficiently high to provide the transmitted beam 153with a measurable intensity. The lamp can also be switched on and off tosubtract background light such as from the plasma. In one embodiment,the light source 190 (or the light source 166) provides polychromaticlight, e.g., from an Hg—Cd lamp or a light emitting diode (LED), whichgenerates light in a wavelength range from about 200 nm to about 800 nm.The transmitted beam 153 can be analyzed by a spectrometer (arraydetector with a wavelength-dispersive element) to provide data over awide wavelength range, such as ultraviolet to visible, from about 200 nmto 800 nm. The light source 190 (or the light source 166) can alsocomprise a flash lamp, e.g., a Xe or other halogen lamp, or amonochromatic light source that provides optical emission at selectedwavelengths, for example, a He—Ne or ND-YAG laser.

Optionally, a light beam positioner 184 may be used to move the incidentlight beam 176 across the substrate 120 to locate a suitable portion ofthe substrate surface on which to position the beam spot 180 to monitoran etching process. The light beam positioner 284 may include one ormore primary mirrors 186 that rotate at small angles to deflect thelight beam from the light source 166 onto different positions of thesubstrate surface. The photodetector 170 comprises a light-sensitiveelectronic component, such as a photovoltaic cell, photodiode, orphototransistor, which provides a signal in response to a measuredintensity of the transmitted light beam 153. The signal can be in theform of a change in the level of a current passing through an electricalcomponent or a change in a voltage applied across an electricalcomponent. The photodetector 170 can also comprise a spectrometer (arraydetector with a wavelength-dispersive element) to provide data over awide wavelength range, such as ultraviolet to visible, from about 200 nmto 800 nm. The transmitted light beam 153 undergoes constructive and/ordestructive interference which increases or decreases the intensity ofthe light beam, and the photodetector 170 provides an electrical outputsignal in relation to the measured intensity of the transmitted lightbeam 153. The electrical output signal is plotted as a function of timeto provide a spectrum having numerous waveform patterns corresponding tothe varying intensity of the transmitted light beam 153.

A computer program executed on a computer system 172 compares the shapeof the measured waveform pattern of the transmitted light beam 153 to astored characteristic (or reference) waveform pattern and determines theendpoint of the etching process when the measured waveform pattern isthe same as the characteristic waveform pattern. As such, the period ofthe interference signal may be used to calculate the depth and etchrate. The program may also operate on the measured waveform to detect acharacteristic waveform, such as, an inflection point. The operationscan be simple mathematic operations, such as evaluating a movingderivative to detect an inflection point.

The computer program utilizes the inverse characteristic of the signalinterfacing with the photoresist to remove or cancel out thecontribution of the signal interfacing with the photoresist, thusallowing the signal interfacing with the target layer being etched to bemore accurately analyzed to determine the endpoint of the etched targetlayer.

The endpoint detection system 164 comprises optical setup for operatingin at least one of reflection, interferometry or transmission modes, andis configured for different types of measurements such as reflectance ortransmittance, interferometry, or optical emission spectroscopy.Depending on the application of interest, e.g., the material layers orsubstrate structure being processed, endpoints may be detected based ona change in the reflectance or transmittance intensities, the number ofinterference fringes, or changes in optical emission intensities atspecific wavelengths, or a combination thereof. In one particularembodiment depicted therein, the endpoint detection system 164 isconfigured to detect a process endpoint based on a change in thetransmittance transmitted through an etched substrate surface.

FIG. 2 is a flow diagram of one embodiment of a method 200 for etchingan absorber layer formed in a film stack having a patterned photoresistlayer disposed thereon on a photomask substrate, such as an absorberlayer 306 formed in a film stack 300 having a patterned photoresistlayer 308 disposed on a photomask substrate 120 depicted in FIG. 3A.Dual endpoints may be determined for an etching process for etching boththe photoresist layer 308 and the absorber layer 306. The etchingprocess performed to etch the film stack 300 may be monitored bydifferent etch rate detection techniques of the present invention. Thefilm stack 300 disposed on the photomask substrate 120 that may beutilized to form desired features (i.e., openings 310) in the film stack300. Although the method 200 is described below with reference to asubstrate utilized to fabricate a photomask, the method 200 may also beused to advantage in other photomask etching or any etching application.

The method 200 begins at block 202 when the photomask substrate 120 istransferred to and placed on a substrate support member disposed in anetch reactor, such as the etching chamber depicted in FIG. 1. Asdescribed above, the photomask substrate 120 includes an opticallytransparent silicon based material, such as quartz or low thermalexpansion glass layer having the absorber layer 306 disposed thereondefined by the patterned photoresist layer 308 having portions 312 ofthe absorber layer 306 exposed by the patterned photoresist layer 308readily for etching. In one embodiment, a phase shift mask layer 304 maybe disposed between the substrate 120 and the absorber layer 306.

In one embodiment, the photomask substrate 120 has a rectangular shapehaving sides between about 5 inches to about 9 inches in length. Thephotomask substrate 120 may be between about 0.15 inches and about 0.25inches thick. In one embodiment, the photomask substrate 120 is about0.25 inches thick. The absorber layer 306 may be a metal containinglayer, e.g., a chromium containing layer, such as a Cr metal, chromiumoxide (CrO_(x)), chromium nitride (CrN) layer, chromium oxynitride(CrON), or multilayer with these materials, as needed. The phase shiftmask layer 304 may be a molybdenum containing layer, such as Mo layer,MoSi layer, MoSiN, MoSiON, and the like. The patterned photoresist layer308 is then formed over the absorber layer 306 having openings 310formed therein that expose portions 312 of the absorber layer 306 foretching. The photoresist layer 308 may have an initial thickness 362 andcomprise any suitable photosensitive resist materials, such as an e-beamresist (for example, a chemically amplified resist (CAR)), and depositedand patterned in any suitable manner. The photoresist layer may bedeposited to a thickness between about 100 nm and about 1000 nm.

At block 204, an etching process is performed to etch the absorber layer306 disposed on the substrate 120. The patterned photoresist layer 308may serve as a mask layer to protect some portion of the absorber layer306 from being etched during the absorber layer etching process. Theetching process endpoint detection for etching the absorber layer 306can be monitored either in reflection or transmission mode, andreflectance, transmittance and/or interferometric signals can beperformed. In one particular embodiment depicted therein, the processendpoint detection for etching the absorber layer 306 is monitored intransmission mode.

In one embodiment, halogen-containing gases are used for etchingdifferent materials found on the film stack 200 of the photomaskstructure. For example, a process gas containing chlorine may be usedfor etching an absorber layer (e.g., a chronium containing layer).Alternatively, a fluorine-containing gas such as trifluoromethane (CHF₃)or tetrafluoromethane (CF₄) may also be used during etching of theabsorber layer 306. A plasma is generated from the process gas toperform the etching process until the underlying surface of the phaseshift mask layer 304 is exposed. FIG. 3B depicts an embodiment wherein aportion 314 of the absorber layer 306 has been etched away from thesubstrate 120 in the middle of the etching process after performing theetching process for a period of time.

At block 206, while etching the absorber layer 306, an incident opticalbeam 350, 352 from the endpoint detection system 164 or the light source190 is directed to the etched substrate surface. The incident opticalbeam 350, 352 may have a wavelength between about 170 nm to about 800nm. The incident optical beam 350, 352, as shown in FIG. 3B, from thelight source 190 is directed, through one of the windows in the chamberlid, onto one or more areas of the photomask substrate 120. The incidentoptical beam 350, 352 is directed to different locations of thesubstrate with different materials, such as on a surface 320 of thephotoresist layer 308 and the exposed portion 316 of the absorber layer306. The incident optical beam 350, 352 is directed to the opening 310,such as open areas where the absorber layer 306 is exposed by thepatterned photoresist layer 308 to be etched to form trenches, vias, andapertures for the film stack 300, and also to the surface 320 of thephotoresist layer 308. Different transmission signal may be obtained. Byanalyzing different signals as obtained, dual etching endpoints may beobtained. Alternatively, the plasma itself may be used as the lightsource.

A return beam 354, 356, e.g., transmitted through the surface 320 of thephotoreisst layer 308 and the etched absorber layer 306 within theopenings 310 being etched and exposed, is detected to the photodetector170 of the etch rate detection system 164. During etching of theabsorber layer 306, as well as consumption of the photoresist layer 308during etching, the intensity of the transmitted optical beam 354, 356changes overtime. The time-varying intensity of the transmitted opticalbeam 354, 356 at particular wavelengths is then analyzed to determine atleast one of the depth etched, the etch rate and the end point of theabsorber layer etching process.

At block 208, a first etching process endpoint is determined byanalyzing the waveform obtained from the detected transmitted opticalbeam 356 transmitted from a surface 316 of the etched substrate when theabsorbed layer 306 exposed by the patterned photoresist layer 308 isremoved from the substrate 102, as shown in FIG. 3C. The optical signalsas detected from the transmitted beam 354, 356 is utilized for both ofthe etch rate determination for etching the absorber layer 306 and thethickness loss of the photoresist layer 308. In one embodiment, thewavelength of the optical beam 354, 356 is controlled at a lightwavelength at between about 200 nm and about 800 nm from the lightsource 190. An optical signal 402, as shown in FIG. 4, is plotted as afunction of time to provide a waveform pattern corresponding to thevarying intensity of the transmitted optical beam 356 over timetransmitted through the absorber layer 306 without interference with thephotoresist layer 308. The waveform pattern will be different at otherwavelengths. Collecting a spectrum of wavelengths will provide numerouswaveform patterns. The optical signal 402 is detected real-time when theabsorber layer 306 is etched in the etch reactor. In the embodimentdepicted in FIG. 4, the intensity of the transmitted beam 356 isgradually increasing at a slope 404 as the underlying phase shift masklayer 304 is gradually exposing. When the absorber layer 306 isgradually etched away, the intensity of the transmitted optical beam 356gradually increases until becoming saturated at a situated intensity410. When the intensity of the optical signal 402 is saturated and at asteady state for a time period 406, it indicates the absorber layer 306has been etched away, exposing the underlying phase shift mask layer304, thereby determining a time point 412 as the proper endpoint foretching away the absorber layer 306.

In one embodiment, an endpoint for etching the absorber layer 306 may bedetermined when the intensity of the transmitted optical beam 356 asdetected is between about 60 percent and about 95 percent, such asbetween about 70 percent to 90 percent, more than an initial detectedtransmitted optical beam intensity 408 collected in a beginning timepoint 403 of the detection process (e.g., from intensity 408 tointensity 410). In another embodiment, the endpoint for etching theabsorber layer 306 may be determined when the slope of the opticalsignal 402 increases at least two times of its initial amount. In otherword, the endpoint for etching the absorber layer 306 is determined whena change in slope is about greater than about 50 percent of the originaldetected slope. In yet another embodiment, the endpoint for etching theabsorber layer 306 may be determined when the optical signal 402 hasbecome saturated and remains in a steady state for at least about a timeperiod 406, such as greater than 3 seconds. In an exemplary embodimentwherein a light source is between about 200 nm and about 400 nm, such asbetween about 230 nm and about 350 nm, for example about 230 nm,wavelength is utilized to detect the endpoint for etching the absorberlayer 306, the process endpoint occurred at time point 412 is betweenabout 5 seconds and about 600 seconds.

At block 210, after the first end point for etching the absorber layer306 is determined, a second end point for the etching photoresist layer308 may be subsequently determined by analyzing a spectrum 508 obtainedfrom the transmitted light beam 354 transmitted through the photoresistlayer 308, as shown in FIG. 5B.

Referring first to FIG. 5A, different waveforms may be obtained atdifferent photoresist layer thickness during different stages of theabsorber layer etching process. A first waveform 502 is obtained atinitial stage of the etching process of the absorber layer 306 so thatmost of the bulk photoresist layer thickness, such as the thickness 362depicted in FIG. 3A, of the photoresist layer 308 is still present onthe substrate 120. A second waveform 504 is obtained during etching ofthe photoresist layer 308 after a portion of the photoresist layer 308is consumed, leaving the remaining thickness 360 depicted in FIG. 3B,during the etching process of the absorber layer 306. A third waveform506 is obtained during etching of the photoresist layer 308 after mostof the photoresist layer 308 has been consumed, leaving the remainingthickness 364 depicted in FIG. 3C, after the etching process of theabsorber layer 306. As shown in FIG. 5A, the first, second and the thirdwaveforms 502, 504 and 506 are mostly overlapped at a short wavelengthrange less than 400 nm, as indicated in a short wavelength region 505defined by the dotted line 503. At a wavelength greater than 400 nm, thefirst, second and third waveforms 502, 504, 506, have their own uniquesignal intensity behaviors, as indicated in a long wavelength region 507defined by the dotted line 503. For example, at a wavelength greaterthan 400 nm in the long wavelength region 507, the signal intensities ofthe first, second and third waveforms 502, 504, 506 are distinguishablydifferent from each other and have their own specific intensities thatrepresent different detected photoresist layer thickness. Accordingly,by using a light source with specific wavelength range, such as greaterthan 400 nm, different thickness of the photoresist layer 308 remainingon the substrate 120 may be determined. In one embodiment, a lightsource with wavelength in long wavelength range, such as greater than400 nm, is utilized to detect an endpoint (or thickness loss) of thephotoresist layer 308.

FIG. 5B depicted an optical signal 508 indicating the signal intensitychange of the transmitted light source 354 transmitting through thephotoresist layer 308 during the etching process. The downturn 510 ofthe optical signal 508 at a wavelength less than 400 nm, indicated bythe dotted line 512, indicates that the photoresist layer 308 at thiswavelength range is not substantially transparent. Thus, an absorberlayer etching endpoint may not be easily determined using the signalchange for less than 400 nm wavelength signals. As the optical signal508 transitions to a longer wavelength range, e.g., greater than 400 nmwavelength, a distinct peak 514 may be observed. This peak 514 shifts inwavelength as the thickness of the photoresist layer 308 is graduallyconsumed and etched away. At individual wavelengths, the signal 508increases or decreases as the photoresist layer becomes thinner. Afterthe optical signal 508 has reached to a certain value 516, an endpointof the photoresist layer etching/thickness loss/thickness consumptionprocess may be determined. Alternatively, the remaining thickness of thephotoresist layer 308 on the substrate 120 may be determined based onthe signal intensity of the optical signal 508 versus wavelength asdetected. Alternatively, the endpoint may be obtained by time mode basedon the etch rate detected. After a predetermined processing time isreached, the desired depth of the feature etched in the quartz substrateis reached.

Accordingly, dual endpoints of etching the photoresist layer 308 and theabsorber layer 306 may both be obtained during one etching process byusing one light beam radiation with broad range of wavelength.Subsequently, the dual endpoint detection process may be determined bysplitting the analyzing process into two analyzing step process so as toanalyze waveforms in two different wavelength ranges to determine theendpoints for each of the photoresist layer 308 and the absorber layer306.

In one embodiment, an endpoint for etching the photoresist layer 308 maybe determined when the intensity of the transmitted optical beam 356 asdetected is between about 50 percent and about 90 percent, such asbetween about 60 percent and 80 percent, below the peak 514 of theintensity of the optical signal 508 collected during etching, as shownin FIG. 5B. In yet another embodiment, the endpoint for etching thephotoresist layer 308 may be determined when the optical signal 508 hasbecome saturated and remains in a steady state condition exceeding apredetermined period of time 518, such as greater than 3 seconds. In anexemplary embodiment wherein a light source is between about 400 nm andabout 800 nm, such as about 450 nm wavelength, is utilized to detect theendpoint for etching the photoresist layer 308, the process endpoint maybe selected as a time period is between about 5 seconds and about 600seconds.

By monitoring transmissivity of an optical beam transmitted throughareas having photoresist layer and etched absorber layer at twodifferent predetermined wavelengths, dual process endpoints may beobtained by a signal optical detection. By analyzing waveforms obtainedfrom the transmitted optical beam transmitted through an etchedsubstrate surface at different wavelengths at different etching stage,dual process endpoints for both the photoresist layer etching and theabsorber layer etching may be obtained. These improvements also allowreliable etch rate/loss of thickness and endpoint determination forphtoresist layer and absorber layer etching applications.

While the foregoing is directed to embodiments of the present invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

The invention claimed is:
 1. A method of determining dual etchingendpoints on an etching process, comprising: performing an etchingprocess on an absorber layer disposed on a first surface of a substratethrough a patterned photoresist layer in a plasma etch chamber;directing radiation having a wavelength between about 200 nm and about800 nm to an area of the absorber layer uncovered by the patternedphotoresist layer during the etching process; collecting a first opticalsignal transmitted through the area of the absorber layer uncovered bythe patterned photoresist layer; collecting a second optical signaltransmitted through an area of the absorber layer covered by thepatterned photoresist layer; analyzing a waveform obtained from theoptical signals at two different wavelengths; and determining a firstendpoint for etching the absorber layer and a second endpoint foretching the photoresist layer based on the transmitted optical signal atthe two different wavelengths when an intensity of the transmitted firstand second optical signals as detected is about 70 percent to 90 percentmore than an initial first and the second optical signals.
 2. The methodof claim 1, wherein the substrate is a photomask reticle.
 3. The methodof claim 1, wherein the two different wavelengths comprises: a firstwavelength having a wavelength between about 200 nm and about 400 nm,and a second wavelength having a wavelength greater than 400 nm.
 4. Themethod of claim 1, wherein analyzing the waveform further comprises:analyzing a first waveform in a transmission form plotted as a functionof intensity verses time at a wavelength between about 200 nm and about400 nm.
 5. The method of claim 4, wherein analyzing the waveform furthercomprises: analyzing a second waveform as a function of time versesintensity at a wavelength greater than 400 nm.
 6. The method of claim 1,further comprising: determining the first endpoint for etching theabsorber layer in response to the optical signal becoming saturated. 7.The method of claim 1, wherein the absorber layer is a Cr containinglayer.
 8. The method of claim 1, further comprising: determining thesecond endpoint for etching the photoresist layer in response to theoptical signal becoming saturated.
 9. The method of claim 3, wherein thefirst wavelength is between about 230 nm and about 350 nm.
 10. Themethod of claim 9, wherein the second wavelength is between about 400 nmand about 800 nm.
 11. The method of claim 1, wherein the photoresistlayer has a thickness between about 100 nm and about 1000 nm.
 12. Amethod of determining dual etching endpoints on an etching process,comprising: performing an etching process on a chromium containing layerdisposed on a first surface of a substrate through a patternedphotoresist layer in a plasma etch chamber; directing a radiation sourcehaving a wavelength from about 200 nm and about 800 nm from the firstsurface of the substrate to areas both covered and uncovered by thepatterned photoresist layer; collecting a first optical signaltransmitted through the area of the chromium layer uncovered by thepatterned photoresist layer to obtain a first waveform from thetransmitted first optical signal; analyzing the first waveform obtainedthe transmitted first optical signal transmitted through the firstsurface of the substrate; determining a first endpoint of the etchingprocess when a change in slope of the first optical signal in the firstwaveform is about greater than 50 percent of an original detected slope;collecting a second optical signal transmitted through an area of theabsorber layer covered by the patterned photoresist layer to obtain asecond waveform from the transmitted second optical signal; analyzingthe second waveform obtained from the second optical signals transmittedthrough the photoresist layer; and determining a second endpoint of theetching process when a change in slope of the second waveform is aboutgreater than 50 percent of an original detected slope.
 13. The method ofclaim 12, wherein the substrate is a photomask reticle.
 14. The methodof claim 12, wherein the first wavelength is between about 200 nm andabout 400 nm.
 15. The method of claim 12, wherein the second wavelengthgreater than 400 nm.
 16. The method of claim 12, wherein the firstwavelength is between about 230 nm and about 350 nm.
 17. The method ofclaim 12, wherein the second wavelength is between about 400 nm andabout 800 nm.
 18. A method of determining dual etching endpoints on anetching process, comprising: performing an etching process on a chromiumcontaining layer disposed on a first surface of a substrate through apatterned photoresist layer in a plasma etch chamber; directing aradiation source to areas of the chromium layer uncovered by thepatterned photoresist layer and a surface of the photoresist layer;collecting a first optical signal at a wavelength between about 200 nmand about 400 nm transmitted through the area uncovered by the patternedphotoresist layer to obtain a first waveform from the transmitted firstoptical signal; analyzing a first waveform obtained the transmittedfirst optical signal reflected from the first surface of the substrate;determining a first endpoint of the etching process when a change inslope of the transmitted first optical signal is about greater than 50percent of an original detected slope; directing a second radiationsource having a second wavelength about greater than 400 nm from thearea of the surface of the photoresist layer; collecting a secondoptical signal transmitted through the surface of the photoresist layerto obtain a second waveform from the transmitted second optical signal;analyzing a second waveform obtained the transmitted second opticalsignal transmitted through the photoresist layer; and determining asecond endpoint of the photoresist layer when a change in slope of thetransmitted second optical signal is about greater than 50 percent of anoriginal detected slope.